PESD5V0S1BLD,315【PDF 4/13 页】DIODE ESD PROTECTION SOD-882

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NXP Semiconductors

PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

001aaa631

120

I PP

(%)

80

100 % I PP ; 8 μ s

e ? t

001aaa630

I PP

100 %

90 %

5 0 % I PP ; 20 μ s

40

10 %

0

0

10

20

30

t ( μ s)

40

t r = 0.7 ns to 1 ns

30 ns

60 ns

t

Fig 2.

8/20 μ s pulse waveform according to

IEC 61000-4-5

Fig 3.

ESD pulse waveform according to

IEC 61000-4-2

6. Characteristics

Table 8. Characteristics

T amb = 25 ° C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per diode

V RWM

reverse standoff voltage

-

-

5.0

V

I RM

V BR

C d

reverse leakage current

breakdown voltage

diode capacitance

V RWM = 5.0 V

I R = 1 mA

f = 1 MHz;

-

5.5

-

5

-

35

100

9.5

45

nA

V

pF

V R = 0 V

V CL

clamping voltage

[1][2]

r dyn

dynamic resistance

I PP = 1 A

I PP = 12 A

I R = 10 A

I R = ? 10 A

[2][3]

-

-

-

-

-

-

0.1

0.15

10

14

-

-

V

V

Ω

Ω

[1]

[2]

[3]

Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.

Measured from pin 1 to pin 2.

Non-repetitive current pulse; Transmission Line Pulse (TLP) t p = 100 ns; square pulse;

ANSI/ESD STM5.1-2008.

PESD5V0S1BLD

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 12 October 2010

? NXP B.V. 2010. All rights reserved.

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